RH(77 K) of the n-type layer created by ion milling is investigated in Hg
vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type
Hg1−xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed,
and the temperature-activated relaxation occurs in all cases. The annealing at
75°C results in a gradual degradation of the converted n-type layer and a back
n-to-p conversion within 8 days. The existence of a high-conducting, surfacedamaged
region with a high-electron density (∼1018 cm−3) and a low mobility
(∼103 cm2/Vs) is confirmed, and its influence on the relaxation is studied.
