Перегляд за Автор "Swiatek, Z."

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Controlled arsenic diffusion in epitaxial CdXHg1-XTe layers in the evaporation-condensation-diffusion process
(2002) Vlasov, Andriy; Pysarevsky, V.; Storchun, O.; Shorchenko, A.; Bonchyk, A.; Pokhmurska, H.; Barcz, A.; Swiatek, Z.; Власов, Андрій; Писаревський, В.; Сторчун, О.; Шорченко, А.; Бончик, А.; Похмурська, Г.; Святек, З.
The results of controlled doping of CdxHg1yxTe epitaxial layers are presented. The investigated layers were obtained by the evaporation–condensation–diffusion method in the process of isothermal growth. The process of auto diffusion from the solid phase was investigated. This process consists in the diffusion of As dopants from CdTe substrate into the grown epitaxial layer. Two types of CdTe substrates, uniformly doped in the process of synthesis and unalloyed with ion implanted surface layer, have been used as sources of As diffusant. Comparative analysis of galvanomagnetic measurements and SIMS spectra was carried out. The results of investigations indicate the very high, almost 100%, electrical activity of As dopants in the CdxHg1yxTe epitaxial grown layer. 2002 Elsevier Science B.V. All rights reserved.
Reconstruction of lattice structure of ion-implanted near-surface regions of Hg1 − XCdXTe epitaxial layers
(2008) Vlasov, Andriy; Bonchyk, O.; Kiyak, S.; Fodchuk, I.; Kazemirskiy, T.; Barcz, A.; Zieba, P.; Swiatek, Z.; Maziarz, W.; Власов, Андрій
The results of X-ray, SIMS, SEM and AFM studies of near-surface regions of Hg1 − XCdXTe (111) and (110) structures have been presented. These structures were obtained during annealing in the vapour of main components of ISOVPE Hg1 − XCdXTe epitaxial layers with the surface implanted with arsenic ions. Berg-Barrett topography method and two-crystal spectrometry technique were exploited. For calculation of depth dependences of deformations and concentrations of dominating defects in the layer's near-surface regions, the Takagi-Taupin equation and generalized dynamic theory of X-ray scattering were used. From experimental SIMS analysis, the distributions of both impurity and main components of Hg1 − XCdXTe solid solution were determined providing more accurately the deformation profiles in near-surface regions of the structures. SIMS and SEM analyses have given evidence of abrupt gradients of content in the Hg1 − XCdXTe solid solution, due to small changes of thermodynamical equilibrium conditions of high-temperature annealing in the near-surface regions. These are the cause of formation of a gradedgap structure with strains in the crystal lattice. AFM studies have demonstrated that the morphology of Hg1 − XCdXTe structures is subjected to the influence of CdTe substrate orientation.
The controlled doping and structural homogeneity of CdHgTe epitaxial layers=Kontrolowane domieszkowanie i jednorodność strukturalne warstw epitoksjalnych CdHgTe
(2007) Vlasov, Andriy; Bonchyk, O.; Fodchuk, I.; Zaplitnyy, R.; Barcz, A.; Swiatek, Z.; Litynska-Dobrzynska, L.; Zieba, P.; Bielanska, E.; Guspiel, J.; Власов, Андрій
X-ray diffraction methods as well as atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) were used to study the controlled doping and structural homogeneity of HgCdTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for CdHgTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at a dose of 1×1015cm−2 and an energy of 100 keV. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation and the influence of radiation defects on the quality of obtained layers are analyzed