Перегляд за Автор "Zieba, P."

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Reconstruction of lattice structure of ion-implanted near-surface regions of Hg1 − XCdXTe epitaxial layers
(2008) Vlasov, Andriy; Bonchyk, O.; Kiyak, S.; Fodchuk, I.; Kazemirskiy, T.; Barcz, A.; Zieba, P.; Swiatek, Z.; Maziarz, W.; Власов, Андрій
The results of X-ray, SIMS, SEM and AFM studies of near-surface regions of Hg1 − XCdXTe (111) and (110) structures have been presented. These structures were obtained during annealing in the vapour of main components of ISOVPE Hg1 − XCdXTe epitaxial layers with the surface implanted with arsenic ions. Berg-Barrett topography method and two-crystal spectrometry technique were exploited. For calculation of depth dependences of deformations and concentrations of dominating defects in the layer's near-surface regions, the Takagi-Taupin equation and generalized dynamic theory of X-ray scattering were used. From experimental SIMS analysis, the distributions of both impurity and main components of Hg1 − XCdXTe solid solution were determined providing more accurately the deformation profiles in near-surface regions of the structures. SIMS and SEM analyses have given evidence of abrupt gradients of content in the Hg1 − XCdXTe solid solution, due to small changes of thermodynamical equilibrium conditions of high-temperature annealing in the near-surface regions. These are the cause of formation of a gradedgap structure with strains in the crystal lattice. AFM studies have demonstrated that the morphology of Hg1 − XCdXTe structures is subjected to the influence of CdTe substrate orientation.
The controlled doping and structural homogeneity of CdHgTe epitaxial layers=Kontrolowane domieszkowanie i jednorodność strukturalne warstw epitoksjalnych CdHgTe
(2007) Vlasov, Andriy; Bonchyk, O.; Fodchuk, I.; Zaplitnyy, R.; Barcz, A.; Swiatek, Z.; Litynska-Dobrzynska, L.; Zieba, P.; Bielanska, E.; Guspiel, J.; Власов, Андрій
X-ray diffraction methods as well as atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) were used to study the controlled doping and structural homogeneity of HgCdTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for CdHgTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at a dose of 1×1015cm−2 and an energy of 100 keV. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation and the influence of radiation defects on the quality of obtained layers are analyzed