Перегляд за Автор "Berchenko, N."

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Conductivity type conversion in p- CdXHg1-XTe
(2003) Berchenko, N.; Bogoboyashchiy, V.; Izhnin, I.; Vlasov, Andriy; Kurbanov, K.; Yudenkov, V.; Берченко, Н.; Богобоящий, В.; Іжнін, І.; Власов, Андрій; Курбанов, К.; Юденков, В.
Investigations and comparative analysis of p-to-n type conductivity conversion processes on the identical samples of vacancy doped p-CdxHg–xTe (x 0.2) under ion-beam milling (IBM) and anodic oxide annealing and on the identical samples of As-doped p-CdxHg1–xTe (x 0.22) under IBM and anodic oxide annealing have been carried out. The conductivity type conversion has been observed at the considerable depth of the vacancy doped material both under IBM or under anodic oxide annealing while in the case with As-doped material only under IBM. It was considered that conversion in all these processes was determined by the mercury interstitial diffusion from corresponding mercury diffusion source and recombination with its native acceptors – cationic vacancies (in the first case) or with donor complex formations (in the second one). It has been shown that in the vacancy-doped p-CdxHg1–xTe the effective diffusion coefficients for the mercury interstitials that determines the depth of the converted layer are equal each other at equal temperatures either under thermal annealing in the saturated mercury vapour or anodic oxide annealing. It proves the identity of the mercury concentration in the diffusion source. Absence of the conversion under anodic oxide annealing in the As-doped p-CdxHg1–xTe is explained by insufficient Hg concentration in the source and it matches well with necessary condition for donor complex formation as it takes place under IBM.
Defect Structure Rebuilding by Ion Beam Milling of As and Sb Doped p-Hg1–xCdxTe
(2002) Berchenko, N.; Bogoboyashchiy, V.; Izhnin, I.; Vlasov, Andriy; Берченко, Н.; Богобоящий, В.; Іжнін, І.; Власов, Андрій
This study focuses on developing an understanding of the mechanisms of ion beam milling induced p-to-n conversion in extrinsically (As or Sb) doped p-Hg1––xCdxTe with x 0.2. The basis of modeling is the quasichemical approach and the model of superfast Hg interstitial atoms diffusion that has permitted to explain the similar conversion occurred in Hg vacancy-doped p-type Hg1––xCdxTe. In an acceptor doped material a donor is generated due to the formation of a complex (of interstitial Hg atom and an As or Sb atom located in the Te site). This model provides reasonably good fits with the experimental results obtained for As and Sb doped Hg1––xCdxTe epitaxial layers where the electron concentration in the converted n-layer corresponds to the concentration of the p-type dopants. Different efficiency of the conductivity conversion observed for As and Sb doped samples may be explained by different enthalpy of complex formation calculated for AsTe–HgI and SbTe– HgI pairs.
Influence of laser shock waves on As implanted HgCdTe
(2007) Yakovyna, V.; Berchenko, N.; Kuzma, M.; Vlasov, Andriy; Яковина, В.; Берченко, Н.; Кузма, М.; Власов, Андрій
The principal purpose of our research is to show that low-temperature treatment of materials can be successfully used instead of annealing. Laser shock waves (LSW) were chosen as an alternative to form p-n junctions in HgCdTe after arsenic ions were implanted. Electrical characteristics of As implanted HgCdTe bulk crystals were studied to determine the effect of LSW generated by nanosecond laser irradiation pulses. The samples were of n-type conductivity immediately after the implantation. Then LSW processing was performed under increasingly growing laser beam power density and shock wave pressure. The experiment demonstrated that a threshold shock wave pressure should be reached to ensure the p-to-n conductivity conversion in the surface layer of samples. On the whole the results provide evidence that LSW combined with ion implantation can be used to form p-n junctions in HgCdTe