Перегляд за Автор "Belas, E."

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Time Relaxation of Point Defects in p- and n-(HgCd)Te after Ion Milling
(2003) Belas, E.; Bogoboyashchyy, V.; Grill, R.; Izhnin, I.; Vlasov, Andriy; Yudenkov, V.; Белас, Е.; Богобоящий, В.; Гріл, Р.; Іжнін, І.; Власов, Андрій; Юденков, В.
RH(77 K) of the n-type layer created by ion milling is investigated in Hg vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type Hg1−xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed, and the temperature-activated relaxation occurs in all cases. The annealing at 75°C results in a gradual degradation of the converted n-type layer and a back n-to-p conversion within 8 days. The existence of a high-conducting, surfacedamaged region with a high-electron density (∼1018 cm−3) and a low mobility (∼103 cm2/Vs) is confirmed, and its influence on the relaxation is studied.