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|Title:||Barrier structures on the basis of graded-band-gap CdHgTe obtained by evaporation-condensation-diffusion method|
Ivashko, M. V.
Petryna, R. L.
Bonchyk, A. Yu.
Sokolovskii, B. S.
|Citation:||Barrier structures on the basis of graded-band-gap CdHgTe obtained by evaporation-condensation-diffusion method / Z. Świątek, A. P. Vlasov, M. V. Ivashko, R. L. Petryna, A. Yu. Bonchyk, B. S. Sokolovskii // Arch. Metall. Mater. – 2016. – Vol. 61, No 1. – P. 115 – 122. (Scopus)|
|Description:||The paper presents the methods of obtaining photovoltaic structures based on CdXHg1- XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.|
|Appears in Collections:||Наукові праці професорсько-викладацького складу ЛДУФК в базах даних Scopus, WoS, Tomson Reuters|
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