Please use this identifier to cite or link to this item: http://repository.ldufk.edu.ua/handle/34606048/10451
Title: The controlled doping and structural homogeneity of CdHgTe epitaxial layers=Kontrolowane domieszkowanie i jednorodność strukturalne warstw epitoksjalnych CdHgTe
Authors: Vlasov, Andriy
Bonchyk, O.
Fodchuk, I.
Zaplitnyy, R.
Barcz, A.
Swiatek, Z.
Litynska-Dobrzynska, L.
Zieba, P.
Bielanska, E.
Guspiel, J.
Власов, Андрій
Keywords: doping
ion implantation
epitaxial layers
CdHgTe
Issue Date: 2007
Citation: The controlled doping and structural homogeneity of CdHgTe epitaxial layers=Kontrolowane domieszkowanie i jednorodność strukturalne warstw epitoksjalnych CdHgTe / A. Vlasov, O. Bonchyk, I. Fodchuk, R. Zaplitnyy, A. Barcz, Z. Swiatek, l. Litynska-Dobrzynska, P. Zieba, E. Bielanska, J. Guspiel // Archives of metallurgy and materials. – 2007. – Vol. 52, is. 4. – P. 563–568. (Scopus)
Abstract: X-ray diffraction methods as well as atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) were used to study the controlled doping and structural homogeneity of HgCdTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for CdHgTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at a dose of 1×1015cm−2 and an energy of 100 keV. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation and the influence of radiation defects on the quality of obtained layers are analyzed
URI: http://repository.ldufk.edu.ua/handle/34606048/10451
Appears in Collections:Наукові праці професорсько-викладацького складу ЛДУФК в базах даних Scopus, WoS, Tomson Reuters

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