Please use this identifier to cite or link to this item: http://repository.ldufk.edu.ua/handle/34606048/10405
Title: High temperature arsenic doping of CdHgTe epitaxial layers
Authors: Vlasov, Andriy
Bogoboyashchiy, V.
Bonchyk, O.
Barcz, A.
Власов, Андрій
Богобоящий, В.
Бончик, О.
Keywords: doping
diffusion
graded-band-gap structures
CdHgTe
Issue Date: 2004
Citation: High temperature arsenic doping of CdHgTe epitaxial layers / A. Vlasov, V. Bogoboyashchyy, O. Bonchyk, A. Barcz // Cryst. Res. Technol. – 2004. – Vol. 39, N 1. – P. 11–22. (Scopus)
Abstract: Experimental results on solid-state arsenic doping of the n-type bulk and ISOVPE epitaxial CdXHg1-XTe (X = 0.19÷0.3) alloys are presented. The arsenic doped thin epitaxial CdxHg1-xTe films (nAs ≈ 5⋅1016÷1⋅1020 cm-3; d =2÷5 μm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures Т = 500÷600°С under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermoemf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed.
URI: http://repository.ldufk.edu.ua/handle/34606048/10405
Appears in Collections:Наукові праці професорсько-викладацького складу ЛДУФК в базах даних Scopus, WoS, Tomson Reuters

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