Please use this identifier to cite or link to this item: http://repository.ldufk.edu.ua/handle/34606048/10403
Title: Time Relaxation of Point Defects in p- and n-(HgCd)Te after Ion Milling
Authors: Belas, E.
Bogoboyashchyy, V.
Grill, R.
Izhnin, I.
Vlasov, Andriy
Yudenkov, V.
Белас, Е.
Богобоящий, В.
Гріл, Р.
Іжнін, І.
Власов, Андрій
Юденков, В.
Keywords: (HgCd)Te
type conversion
ion milling
Issue Date: 2003
Citation: Time relaxation of point defects in p- and n-(HgCd)Te after ion milling / Belas E., Bogoboyashchyy V. V, Grill R., Iznin I. I., Vlasov A. P., Yudenkov V. A. // Journal of electron. mater. – 2003. – Vol. 32, N 7. – P. 698–702. (Scopus)
Abstract: RH(77 K) of the n-type layer created by ion milling is investigated in Hg vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type Hg1−xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed, and the temperature-activated relaxation occurs in all cases. The annealing at 75°C results in a gradual degradation of the converted n-type layer and a back n-to-p conversion within 8 days. The existence of a high-conducting, surfacedamaged region with a high-electron density (∼1018 cm−3) and a low mobility (∼103 cm2/Vs) is confirmed, and its influence on the relaxation is studied.
URI: http://repository.ldufk.edu.ua/handle/34606048/10403
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