Please use this identifier to cite or link to this item: http://repository.ldufk.edu.ua/handle/34606048/10400
Title: Mechanism for conversion of the conductivity type in arsenic doped p-CdxHg1–xTe subject to ionic etching
Authors: Bogoboyashchiy, V.
Vlasov, Andrii
Izhnin, I.
Keywords: conversion
ionic etching
arsenic doped
Issue Date: 2001
Citation: Bogoboyashchyy V. V. Mechanism for conversion of the conductivity type in arsenic doped p-CdxHg1–xTe subject to ionic etching / V. V. Bogoboyashchii, A. P. Vlasov, I. I. Izhnin // Russian Physics Journal. - 2001. - Vol. 44, no. 1. - P. 61-70.
Abstract: Based on an analysis of chemical diffusion of mercury in p-CdxHg1–xTe:As narrow-band solid solutions, a mechanism for conversion of the conductivity type upon ionic etching is suggested. It is shown that the n–p conversion of the conductivity in this case is due to the formation of a donor complex between arsenic in the Te sublattice and an interstitial Hg atom. Moreover, the electron concentration in the converted layer corresponds to the concentration of the implanted arsenic impurity. The theoretical results are confirmed by the experimental investigation of the electron concentration distribution over the n-layer of a p-CdxHg1–xTe:As epistructure converted upon ionic etching.
URI: http://repository.ldufk.edu.ua/handle/34606048/10400
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