Vlasov, AndriyBonchyk, O.Kiyak, S.Fodchuk, I.Kazemirskiy, T.Barcz, A.Zieba, P.Swiatek, Z.Maziarz, W.Власов, Андрій2018-05-152018-05-152008Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers / Vlasov A. [et al.] // Thin Solid Films. – 2008. – Vol. 516. – P. 8106 − 8111. (Scopus)http://repository.ldufk.edu.ua/handle/34606048/10453The results of X-ray, SIMS, SEM and AFM studies of near-surface regions of Hg1 − XCdXTe (111) and (110) structures have been presented. These structures were obtained during annealing in the vapour of main components of ISOVPE Hg1 − XCdXTe epitaxial layers with the surface implanted with arsenic ions. Berg-Barrett topography method and two-crystal spectrometry technique were exploited. For calculation of depth dependences of deformations and concentrations of dominating defects in the layer's near-surface regions, the Takagi-Taupin equation and generalized dynamic theory of X-ray scattering were used. From experimental SIMS analysis, the distributions of both impurity and main components of Hg1 − XCdXTe solid solution were determined providing more accurately the deformation profiles in near-surface regions of the structures. SIMS and SEM analyses have given evidence of abrupt gradients of content in the Hg1 − XCdXTe solid solution, due to small changes of thermodynamical equilibrium conditions of high-temperature annealing in the near-surface regions. These are the cause of formation of a gradedgap structure with strains in the crystal lattice. AFM studies have demonstrated that the morphology of Hg1 − XCdXTe structures is subjected to the influence of CdTe substrate orientation.enMercury cadmium tellurideX-ray topographyGraded-gap structuresArticle