Vlasov, AndriyBonchyk, O.Fodchuk, I.Zaplitnyy, R.Barcz, A.Swiatek, Z.Litynska-Dobrzynska, L.Zieba, P.Bielanska, E.Guspiel, J.Власов, Андрій2018-05-152018-05-152007The controlled doping and structural homogeneity of CdHgTe epitaxial layers=Kontrolowane domieszkowanie i jednorodność strukturalne warstw epitoksjalnych CdHgTe / A. Vlasov, O. Bonchyk, I. Fodchuk, R. Zaplitnyy, A. Barcz, Z. Swiatek, l. Litynska-Dobrzynska, P. Zieba, E. Bielanska, J. Guspiel // Archives of metallurgy and materials. – 2007. – Vol. 52, is. 4. – P. 563–568. (Scopus)http://repository.ldufk.edu.ua/handle/34606048/10451X-ray diffraction methods as well as atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) were used to study the controlled doping and structural homogeneity of HgCdTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for CdHgTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at a dose of 1×1015cm−2 and an energy of 100 keV. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation and the influence of radiation defects on the quality of obtained layers are analyzedendopingion implantationepitaxial layersCdHgTeArticle