Belas, E.Bogoboyashchyy, V.Grill, R.Izhnin, I.Vlasov, AndriyYudenkov, V.Белас, Е.Богобоящий, В.Гріл, Р.Іжнін, І.Власов, АндрійЮденков, В.2018-05-132018-05-132003Time relaxation of point defects in p- and n-(HgCd)Te after ion milling / Belas E., Bogoboyashchyy V. V, Grill R., Iznin I. I., Vlasov A. P., Yudenkov V. A. // Journal of electron. mater. – 2003. – Vol. 32, N 7. – P. 698–702. (Scopus)http://repository.ldufk.edu.ua/handle/34606048/10403RH(77 K) of the n-type layer created by ion milling is investigated in Hg vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type Hg1−xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed, and the temperature-activated relaxation occurs in all cases. The annealing at 75°C results in a gradual degradation of the converted n-type layer and a back n-to-p conversion within 8 days. The existence of a high-conducting, surfacedamaged region with a high-electron density (∼1018 cm−3) and a low mobility (∼103 cm2/Vs) is confirmed, and its influence on the relaxation is studied.en(HgCd)Tetype conversionion millingArticle