Świątek, Z.Vlasov, AndriyIvashko, M.Petryna, R.Bonchyk, A.Sokolovskii, B.Власов, АндрійПетрина, Роман2016-03-042016-03-042016Barrier structures on the basis of graded-band-gap CdHgTe obtained by evaporation-condensation-diffusion method / Z. Świątek, A. P. Vlasov, M. V. Ivashko, R. L. Petryna, A. Yu. Bonchyk, B. S. Sokolovskii // Arch. Metall. Mater. – 2016. – Vol. 61, No 1. – P. 115 – 122.http://repository.ldufk.edu.ua/handle/34606048/4496The paper presents the methods of obtaining photovoltaic structures based on CdXHg1- XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.enBarrier structuresevaporation-condensation-diffusion methodArticle