1. Електронний репозит
  2. Наукові видання
  3. Наукові праці професорсько-викладацького складу ЛДУФК в базах даних Scopus, WoS, Tomson Reuters
Please use this identifier to cite or link to this item: https://repository.ldufk.edu.ua/handle/34606048/10511
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dc.contributor.authorŚwiątek, Z.
dc.contributor.authorVlasov, Andriy
dc.contributor.authorIvashko, M. V.
dc.contributor.authorPetryna, R. L.
dc.contributor.authorBonchyk, A. Yu.
dc.contributor.authorSokolovskii, B. S.
dc.date.accessioned2018-05-16T16:33:01Z-
dc.date.available2018-05-16T16:33:01Z-
dc.date.issued2016
dc.identifier.citationBarrier structures on the basis of graded-band-gap CdHgTe obtained by evaporation-condensation-diffusion method / Z. Świątek, A. P. Vlasov, M. V. Ivashko, R. L. Petryna, A. Yu. Bonchyk, B. S. Sokolovskii // Arch. Metall. Mater. – 2016. – Vol. 61, No 1. – P. 115 – 122. (Scopus)uk_UA
dc.identifier.urihttp://repository.ldufk.edu.ua/handle/34606048/10511-
dc.descriptionThe paper presents the methods of obtaining photovoltaic structures based on CdXHg1- XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.uk_UA
dc.language.isoenuk_UA
dc.subjectBarrier structuresuk_UA
dc.subjectevaporation-condensation-diffusion methoduk_UA
dc.titleBarrier structures on the basis of graded-band-gap CdHgTe obtained by evaporation-condensation-diffusion methoduk_UA
dc.typeArticleuk_UA
Appears in Collections:Наукові праці професорсько-викладацького складу ЛДУФК в базах даних Scopus, WoS, Tomson Reuters

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